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Response of Si and InSb to ultrafast laser pulses
Author(s) -
Dumitrica Traian,
Burzo Andrea,
Dou Yusheng,
Allen Roland E.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200404934
Subject(s) - semiclassical physics , femtosecond , context (archaeology) , laser , ultrashort pulse , electron , semiconductor , physics , simple (philosophy) , atomic physics , motion (physics) , atomic units , computational physics , chemistry , materials science , optics , quantum mechanics , classical mechanics , quantum , paleontology , philosophy , epistemology , biology
We present simulations of the response of Si and InSb to femtosecond‐scale laser pulses of various intensities. In agreement with the experiments by various groups on various materials, there is a nonthermal phase transition for each of these semiconductors above a threshold intensity. Our simulations employ semiclassical electron‐radiation‐ion dynamics (SERID), a technique which is briefly described in the text. We also introduce a new addition to the technique, which provides a simple treatment of the correction due to motion of the atomic‐orbital basis functions. We find that this correction is small in the present context, but it may be substantial in situations with more rapid atomic motion. Our expression for this correction is remarkably simple to employ because it amounts to nothing more than a generalized Peierls substitution. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)