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Donor‐related photoionization cross‐section of GaAs–(Ga, Al)As quantum dots: hydrostatic pressure effects
Author(s) -
Correa J. D.,
PorrasMontenegro N.,
Duque C. A.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200404908
Subject(s) - photoionization , hydrostatic pressure , quantum dot , impurity , binding energy , cross section (physics) , atomic physics , chemistry , quantum , effective mass (spring–mass system) , hydrostatic equilibrium , molecular physics , physics , condensed matter physics , ionization , quantum mechanics , ion , thermodynamics , organic chemistry
Using a variational method and the effective‐mass approximation, we calculated the binding energy for shallow‐donor impurities in spherical GaAs–(Ga, Al)As quantum dots. In this paper we present results for different dimensions of the structure and radial impurity positions. Calculations include the hydrostatic pressure effects. We discuss the hydrostatic pressure dependence on the binding energy and the photoionization cross‐section. The measurement of photoionization in such systems would be of great interest in understanding the optical properties of carriers in quantum dots. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)