Negative thermal expansion in the layered semiconductor TlGaSe 2 | Zendy

Abdullayev N. A. | Zendy; Mammadov T. G. | Zendy; Suleymanov R. A. | Zendy

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Negative thermal expansion in the layered semiconductor TlGaSe 2

Author(s) -

Abdullayev N. A.,

Mammadov T. G.,

Suleymanov R. A.

Publication year - 2005

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200402126

Subject(s) - thermal expansion , negative thermal expansion , semiconductor , condensed matter physics , materials science , poisson distribution , poisson's ratio , crystallography , chemistry , composite material , physics , mathematics , optoelectronics , statistics

The nature of negative thermal expansion in the layer plane of the layered semiconductor TlGaSe 2 has been investigated. It is shown that, in contrast to other crystals with a layered structure in which negative linear expansion is observed, the nature of the negative thermal expansion in TlGaSe 2 crystals is due to the large Poisson contraction. The possible explanation of such an effect is discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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