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Dislocation mechanism of quantum dot formation in heteroepitaxial structures
Author(s) -
Vengrenovich R. D.,
Gudyma Yu. V.,
Yarema S. V.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200402115
Subject(s) - ostwald ripening , quantum dot , dislocation , condensed matter physics , materials science , chemical physics , mechanism (biology) , dispersion (optics) , crystallography , nanotechnology , chemistry , physics , optics , quantum mechanics
Quantum dot formation during heteroepitaxial growth of 3D islands in Stranski–Krastanow mode is described. The island size distribution function is shown to become narrower, and the dispersion decreases markedly for dislocation growth mechanism with subsequent separation of dislocations from the island base. Probable reasons for slowing down of Ostwald ripening are also discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)