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Alloy and phonon scattering limited mobility in strain‐free ternary Si 1– x – y Ge x C y
Author(s) -
Mukhopadhyay Bratati,
Basu P. K.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200402108
Subject(s) - ternary operation , scattering , alloy , crystallography , phonon , materials science , ternary alloy , phonon scattering , mole fraction , condensed matter physics , electron mobility , substrate (aquarium) , analytical chemistry (journal) , chemistry , metallurgy , physics , optics , optoelectronics , oceanography , geology , computer science , programming language , chromatography
Abstract Estimates are made of the mobility limited by alloy disorder and phonon scattering mechanisms in strain free Ge‐rich ternary layer Si 1– x – y Ge x C y grown on Si substrate. The expression for alloy scattering potential in ternary was derived for the first time using virtual crystal approximation and it differs from the expressions for ternary and quaternary alloys of III–V compounds. The phonon scattering processes are taken to be identical with those in pure Ge. Conservative estimates of mobility made by using reasonable values of alloy scattering potential indicate that mobility is predominantly limited by alloy scattering for 0.85 < x < 1 and the effect of C mole fraction ( y ) is not much significant for y < 0.1. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)