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Dislocation scattering in a two‐dimensional electron gas of an Al x Ga 1− x N/GaN heterostructure
Author(s) -
Han Xiuxun,
Li Dabing,
Yuan Hairong,
Sun Xuehao,
Liu Xianglin,
Wang Xiaohui,
Zhu Qinsheng,
Wang Zhanguo
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200402080
Subject(s) - scattering , dislocation , heterojunction , condensed matter physics , fermi gas , flattening , electron , electron mobility , electron scattering , materials science , chemistry , physics , optics , quantum mechanics , composite material
Abstract The theoretical electron mobility limited by dislocation scattering of a two‐dimensional electron gas confined near the interface of an Al x Ga 1− x N/GaN heterostructure is calculated. The accurate wave functions and electron distributions of the three lowest subbands for a typical structure are obtained by solving the Schrödinger and Poisson equations self‐consistently. Based on the model of treating dislocation as a charged line, a simple scattering potential, a square‐well potential, is utilized. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data. It is also found that the dislocation scattering dominates both the low‐ and moderate‐temperature mobilities and accounts for the nearly flattening‐out behavior with increasing temperature. To clarify the role of dislocation scattering all standard scattering mechanisms are included in the calculation. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)