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Hole spin surfaces in A 3 B 5 semiconductors
Author(s) -
Dargys A.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200402078
Subject(s) - valence band , condensed matter physics , semiconductor , spin (aerodynamics) , valence (chemistry) , simple (philosophy) , physics , effective mass (spring–mass system) , band gap , semiconductor materials , electronic band structure , chemistry , quantum mechanics , philosophy , epistemology , thermodynamics
Properties of spin surfaces of heavy‐mass, light‐mass and split‐off bands of GaAs, InAs, GaP, InP, GaSb, and InSb are presented under various approximations. A simple two‐band, analytically solvable model is used as a starting point and the reference. It is shown that the strongest deviation from the simple spherical and parabolic two‐band model comes from the valence band nonparabolicity and nonshpericity. The spin‐splitting in all three valence bands was found to have negligible influence on shape of the spin surfaces at thermal hole energies. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)