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Photoluminescence of layered semiconductor GaS doped with Mn
Author(s) -
Shigetomi S.,
Sakai K.,
Ikari T.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200402044
Subject(s) - photoluminescence , doping , impurity , recombination , acceptor , materials science , manganese , spontaneous emission , semiconductor , vacancy defect , radiative transfer , analytical chemistry (journal) , atomic physics , optoelectronics , chemistry , condensed matter physics , optics , crystallography , physics , laser , biochemistry , organic chemistry , chromatography , metallurgy , gene
Manganese (Mn)‐doped GaS single crystals were grown by the Bridgman technique. Radiative recombination mechanisms have been investigated using photoluminescence (PL) measurement. The PL spectrum (at 77 K) related to the impurity level is dominated by the new emission band at 2.002 eV. The temperature dependences of the PL intensity, peak energy, and full width at half‐maximum are characterized by the recombination mechanism of the configurational coordinate model. It was found that the 2.002 eV emission band is related to the acceptor–vacancy complex center. Moreover, the concentration of the defect is very high in the Mn‐doped GaS. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)