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Binding energies of excitons in II–VI compound‐semiconductor based quantum well structures
Author(s) -
Senger R. T.,
Bajaj K. K.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200402034
Subject(s) - exciton , dielectric function , semiconductor , binding energy , quantum well , compound semiconductor , chemistry , quantum chemical , quantum , condensed matter physics , dielectric , molecular physics , atomic physics , materials science , physics , nanotechnology , optoelectronics , quantum mechanics , molecule , laser , epitaxy , organic chemistry , layer (electronics)
We present a brief description of the calculation of the variation of the binding energy of the heavy‐hole exciton as a function of well width in quantum well structures composed of II–VI compound semiconductors including the effects of exciton–optical phonon interaction as formulated by Pollmann and Büttner [J. Pollmann and H. Büttner, Phys. Rev. B 16 , 4480 (1977)], and of particle masses and dielectric mismatches between the well and the barrier layers. We compare the results of our calculations with the available experimental data in ZnSe/MgS, ZnSe/Mg 0.15 Zn 0.85 Se, and ZnS/Mg 0.19 Zn 0.81 S quantum well structures and find a good agreement. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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