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Prospects for carrier‐mediated ferromagnetism in GaN
Author(s) -
Graf Tobias,
Goennenwein Sebastian T. B.,
Brandt Martin S.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200390014
Subject(s) - condensed matter physics , spintronics , antibonding molecular orbital , ferromagnetism , curie temperature , spins , materials science , ferrimagnetism , dangling bond , atomic orbital , magnetic semiconductor , physics , silicon , magnetization , optoelectronics , magnetic field , electron , quantum mechanics
Room‐temperature ferromagnetism has been theoretically predicted for Mn‐doped GaN, making this material promising for spintronic applications. The cover figure shows the defect molecule picture for Mn 3+ ‐induced gap states, which are derived from the antibonding transition‐metal t 2↑ orbitals and the dangling bond t 2↑↓ states of the host lattice. One of the d‐like Mn 3+ t 2↑ levels is occupied by a hole. These localized spins together with free valence‐band holes mediate the magnetic coupling, resulting in a very high Curie temperature. The first author of the Feature Article [1], Tobias Graf, has been working on electrically detected magnetic resonance of III–V alloys, at the Walter Schottky Institut of TU München.