Premium
Ordering in undoped hexagonal Al x Ga 1– x N grownon sapphire (0001) with 0.09 < x < 0.247
Author(s) -
Laügt M.,
BelletAmalric E.,
Ruterana P.,
Omnès F.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200390005
Subject(s) - sapphire , reciprocal lattice , epitaxy , transmission electron microscopy , reflection (computer programming) , electron diffraction , materials science , crystallography , phase (matter) , diffraction , physics , optics , chemistry , nanotechnology , layer (electronics) , laser , quantum mechanics , computer science , programming language
In this issue's Editor's Choice [1], multiple ordering in Al x Ga 1– x N grown by low pressure metal‐organic vapor phase epitaxy on sapphire is observed by comprehensive high resolution X‐ray diffraction as well as transmission electron microscopy investigations. The cover figure shows a detail of the reciprocal space map taken on a Al x Ga 1– x N ( x = 0.167) sample in the vicinity of the &1macr; 0 1 30 spot. The sapphire asymmetric reflection &1macr; &1 macr; 2 12 is also visible. It is concluded that besides the disordered alloy, an ordered phase with two consecutive AlN monolayers in a 3.1 nm large unit cell is present. The first author, Marguerite Laügt, is a researcher at the Centre de Recherche sur l'Hétéro‐Epitaxie et ses Applications of the CNRS at Parc de Sophia Antipolis.