Premium
Proceedings of the Tenth International Conference on High Pressure Semiconductor Physics (HPSP‐X)
Author(s) -
Murdin Ben
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200390000
Subject(s) - semiconductor , engineering physics , high pressure , isotropy , physics , condensed matter physics , anisotropy , quantum mechanics
The Tenth International Conference on High Pressure Semiconductor Physics (HPSP‐X) was held as a satellite meeting of the International Conference on the Physics of Semiconductors in Guildford from 5 to 8 August 2002. It brought together scientists and engineers who use high pressure to study the science and technology of semiconductors. The HPSP‐X conference reviewed the latest issues and developments in the physics of both bulk and low‐dimensional semiconductor materials and devices under pressure. It covered all aspects of fundamental and applied high‐pressure semiconductor research, including experimental and theoretical investigations under isotropic or anisotropic stress conditions. Topics such as electronic structures, vibrational and optical properties, transport phenomena, defect states, phase transitions, and novel materials or structures are included in this issue. Following the meetings HPSP‐VII in Schwäbisch Gmünd, phys. stat. sol. (b) 198 , No. 1 (1996); HPSP‐VIII in Thessaloniki, phys. stat. sol. (b) 211 , No. 1 (1998), and HPSP‐IX in Sapporo, phys. stat. sol. (b) 223 , No. 1/2 (2001), the proceedings of this successful conference series are published in physica status solidi for the fourth time.