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Electron mobility in ZnSe single crystals
Author(s) -
Avdonin A. N.,
Nedeoglo D. D.,
Nedeoglo N. D.,
Sirkeli V. P.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200306590
Subject(s) - impurity , electron mobility , scattering , acceptor , electron , atmospheric temperature range , boltzmann equation , materials science , range (aeronautics) , ionization , boltzmann constant , condensed matter physics , chemistry , thermodynamics , optics , physics , ion , optoelectronics , organic chemistry , quantum mechanics , composite material
Temperature dependence of electron mobility in n‐ZnSe single crystals is investigated in the temperature range 77–300 K. A comparative analysis of experimental data with the known theoretical dependences calculated using solution of the Boltzmann transport equation and taking into consideration all major scattering mechanisms and screening effects is carried out. The good agreement between the experimental and theoretical dependences of electron mobility on both temperature and electron concentration is observed for the samples with various compensation ratios. It is shown that parameters such as the ionized impurity concentration and acceptor concentration can quickly be estimated for strongly compensated samples.