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Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN
Author(s) -
Korona K. P.,
Doradziński R.,
Palczewska M.,
Pietras M.,
Kamińska M.,
Kuhl J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200306171
Subject(s) - photoluminescence , acceptor , exciton , zinc , electron paramagnetic resonance , materials science , radiative transfer , chemistry , nuclear magnetic resonance , condensed matter physics , physics , optoelectronics , optics , metallurgy
Time‐resolved photoluminescence (TRPL) and electron paramagnetic resonance (EPR) studies of Zn acceptor in GaN are presented. The EPR measurements revealed a strong line, which was ascribed to either an isolated Zn acceptor or to a complex defect involving Zn. Two photoluminescence lines were analyzed: the well‐known line of exciton bound to Mg acceptor, A Mg X at 3.467 eV (8 K), and a new line that was ascribed to exciton bound to Zn acceptor, A Zn X at 3.456 eV. The radiative decay time of the A Zn X was about 1.4 ns, which was longer than that of the A Mg X line. The longer radiative lifetime suggested a smaller radius of the A Zn X wave function.