Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN | Zendy

Korona K. P. | Zendy; Doradziński R. | Zendy; Palczewska M. | Zendy; Pietras M. | Zendy; Kamińska M. | Zendy; Kuhl J. | Zendy

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Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN

Author(s) -

Korona K. P.,

Doradziński R.,

Palczewska M.,

Pietras M.,

Kamińska M.,

Kuhl J.

Publication year - 2003

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200306171

Subject(s) - photoluminescence , acceptor , exciton , zinc , electron paramagnetic resonance , materials science , radiative transfer , chemistry , nuclear magnetic resonance , condensed matter physics , physics , optoelectronics , optics , metallurgy

Time‐resolved photoluminescence (TRPL) and electron paramagnetic resonance (EPR) studies of Zn acceptor in GaN are presented. The EPR measurements revealed a strong line, which was ascribed to either an isolated Zn acceptor or to a complex defect involving Zn. Two photoluminescence lines were analyzed: the well‐known line of exciton bound to Mg acceptor, A Mg X at 3.467 eV (8 K), and a new line that was ascribed to exciton bound to Zn acceptor, A Zn X at 3.456 eV. The radiative decay time of the A Zn X was about 1.4 ns, which was longer than that of the A Mg X line. The longer radiative lifetime suggested a smaller radius of the A Zn X wave function.

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