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Transport properties of metal/insulator/semiconductor tunnel junctions
Author(s) -
Lee J. H.,
Park S. Y.,
Jun KyungIn,
Shin K.H.,
Hong Jinki,
Rhie K.,
Lee B. C.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304693
Subject(s) - condensed matter physics , ferromagnetism , insulator (electricity) , materials science , semiconductor , diode , metal , diffusion , optoelectronics , metallurgy , physics , thermodynamics
The transport properties of ferromagnet/Al 2 O 3 /semiconductor tunnel junctions were investigated. Si and GaAs substrates were used, and CoFe and NiFe were taken for ferromagnets. Diode characteristics were observed in current‐voltage curves. The dependences on the Al 2 O 3 thickness and temperature were also studied. It is found that the Al 2 O 3 layer plays a crucial role in preventing inter‐diffusion at the interface. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)