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Hopping Al atom on Si(111) 7 × 7 surface studied by scanning tunneling microscopy
Author(s) -
Uchida H.,
Kuroda T.,
Mohamad Fariza B.,
Kim J.,
Kashiwagi K.,
Nishimura K.,
Inoue M.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304687
Subject(s) - scanning tunneling microscope , atom (system on chip) , adsorption , materials science , center (category theory) , silicon , surface (topology) , quantum tunnelling , crystallography , condensed matter physics , chemistry , nanotechnology , optoelectronics , physics , geometry , mathematics , computer science , embedded system
Adsorption of Al atoms on the Si(111) 7 × 7 surface was investigated by STM at room temperature. The adsorbed Al atom displaced a Si center adatom on the surface, and the expelled Si atom diffused inside a half unit cell. The adsorbed Al atom hopped among center adatom sites with a frequency of about 0.01s −1 . (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)