Hopping Al atom on Si(111) 7 × 7 surface studied by scanning tunneling microscopy | Zendy

Uchida H. | Zendy; Kuroda T. | Zendy; Mohamad Fariza B. | Zendy; Kim J. | Zendy; Kashiwagi K. | Zendy; Nishimura K. | Zendy; Inoue M. | Zendy

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Hopping Al atom on Si(111) 7 × 7 surface studied by scanning tunneling microscopy

Author(s) -

Uchida H.,

Kuroda T.,

Mohamad Fariza B.,

Kim J.,

Kashiwagi K.,

Nishimura K.,

Inoue M.

Publication year - 2004

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200304687

Subject(s) - scanning tunneling microscope , atom (system on chip) , adsorption , materials science , center (category theory) , silicon , surface (topology) , quantum tunnelling , crystallography , condensed matter physics , chemistry , nanotechnology , optoelectronics , physics , geometry , mathematics , computer science , embedded system

Adsorption of Al atoms on the Si(111) 7 × 7 surface was investigated by STM at room temperature. The adsorbed Al atom displaced a Si center adatom on the surface, and the expelled Si atom diffused inside a half unit cell. The adsorbed Al atom hopped among center adatom sites with a frequency of about 0.01s −1 . (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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