Premium
Improvement of adhesion strength of W–B–N glue layer on Si for magnetic devices
Author(s) -
Lee Chang Woo,
Kim Ji Gon
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304657
Subject(s) - glue , boron , boron nitride , adhesive , layer (electronics) , tungsten , materials science , adhesion , composite material , nitrogen , nanotechnology , chemistry , metallurgy , organic chemistry
The structural and the mechanical properties of tungsten boron nitride (W–B–N) thin films were studied to investigate the effects of boron and nitrogen in W–B–N glue layer. The scratch test show that the adhesion strengths of magnetic films on the WBN glue layers are greatly improved from 9–11 N of W–N glue layer to 26–30 N of W–B–N glue layer. The more adhesive contact can be attributed to the boron and nitrogen interstitials because these boron and nitrogen interstitials are expected to modify the structural and physical properties in the W–B–N films. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)