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Resistivities and magnetoresistances of pure, Co‐ and V‐doped Ge single crystals
Author(s) -
Choi Jiyoun,
Choi Sungyoul,
Hong Soon Cheol,
Park Yongsup,
Park HyunMin,
Kim Y. C.,
Cho Sunglae
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304647
Subject(s) - doping , hall effect , germanium , condensed matter physics , materials science , electrical resistivity and conductivity , thermometer , magnetoresistance , analytical chemistry (journal) , chemistry , optoelectronics , magnetic field , physics , thermodynamics , silicon , chromatography , quantum mechanics
We have grown pure, Co‐ and V‐doped Ge bulk single crystals using the vertical gradient solidification method. We measured electrical resistivities, magnetoresistances (MRs) and Hall coefficients of V 0.015 Ge 0.985 and Co 0.02 Ge 0.98 single crystals. The resistivities rapidly increased at low temperature, which might be used for cryogenic thermometer. The MR ratios of V 0.015 Ge 0.985 and Co 0.02 Ge 0.98 are 130 and 90% at 77 K in the field of 5 T, respectively. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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