High frequency tunable  LC  devices with ferroelectric/ferromagnetic thin film heterostructure | Zendy

Yun EuiJung | Zendy; Cheon Chae Il | Zendy

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High frequency tunable LC devices with ferroelectric/ferromagnetic thin film heterostructure

Author(s) -

Yun EuiJung,

Cheon Chae Il

Publication year - 2004

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200304604

Subject(s) - materials science , heterojunction , ferroelectricity , thin film , ferromagnetism , optoelectronics , substrate (aquarium) , ferromagnetic material properties , nanotechnology , condensed matter physics , dielectric , magnetic field , magnetization , oceanography , quantum mechanics , geology , physics

Heterostructure tunable LC devices utilizing ferroelectric BST((Ba,Sr)TiO 3 ) and ferromagnetic LSMO((La,Sr)MnO 3 ) thin films were developed. Both LSMO and BST thin films were prepared by chemical solution deposition. New heterostructure tunable devices, which were composed of MIM‐type ferroelectric C and spiral‐type ferromagnetic L , were fabricated as the following order: ferromagnetic LSMO thin films were deposited on SiO 2 /Si substrate and platinum was deposited as a diffusion barrier and ferroelectric BST thin films were deposited and spiral‐type metal (Pt/Ti) coils were patterned using lift‐off process. The heterostructure tunable device showed large C–V tunability, 58% and also L–V tunability, 11.5% in voltage ranges of –10 V to +10 V. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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