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Selected area growth of II–VI nanostructures using shadow masks
Author(s) -
Schallenberg T.,
Schumacher C.,
Brunner K.,
Molenkamp L. W.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304302
Subject(s) - faceting , substrate (aquarium) , diffusion , epitaxy , surface diffusion , nanostructure , shadow (psychology) , materials science , shadow mask , molecular beam epitaxy , nanotechnology , deposition (geology) , scanning electron microscope , chemistry , optoelectronics , crystallography , optics , layer (electronics) , physics , adsorption , composite material , geology , psychology , paleontology , oceanography , sediment , psychotherapist , thermodynamics
We investigate molecular beam epitaxy of II–VI materials through GaAs/AlGaAs epitaxial shadow masks on GaAs(001) substrate. Scanning electron and atomic force microscopy are employed to investigate the effects of surface diffusion, faceting, partial shadow (minimized in the experimental set‐up), and material deposition on the mask (closing of apertures) on the selected area growth of ZnSe and CdSe. The results illustrate that selected area growth of II–VI nanostructures is controlled by the growth geometry. In contrast to the case of III–V materials, we found no macroscopic features (>10 nm) which could be attributed to surface diffusion. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)