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Quantum Hall ferromagnetism in II–VI based alloys
Author(s) -
Jaroszyński J.,
Andrearczyk T.,
Karczewski G.,
Wróbel J.,
Wojtowicz T.,
Papis E.,
Kamińska E.,
Piotrowska A.,
Popović Dragana,
Dietl T.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304293
Subject(s) - condensed matter physics , ferromagnetism , barkhausen effect , magnetoresistance , curie temperature , quantum hall effect , magnetic semiconductor , hysteresis , hall effect , heterojunction , materials science , physics , magnetic field , quantum mechanics , magnetization
The article reviews our recent studies on quantum Hall ferromagnetism (QHF) in diluted magnetic semiconductors. We carried out magnetoresistance studies on modulation‐doped, gated heterostructures of (Cd,Mn)Te/(Cd,Mg)Te:I.We put into evidence the formation of Ising quantum Hall ferromagnet with Curie temperature T C as high as 2 K. QHF is manifested by anomalous magnetoresistance maxima. Moreover, magnitude of these spikes depends dramatically on the history of the sample, shows hysteresis when either magnetic field or gate voltage are swept, stretched‐exponential time evolution characteristic of glassy systems, and strong Barkhausen noise. Our study suggests that these metastabilities stem from the slow dynamics of ferromagnetic domains. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)