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Determination of the dielectric functions of MBE‐grown Zn 1− x Mg x Te II‐VI semiconductor alloys
Author(s) -
Franz A. J.,
Peiris F. C.,
Liu X.,
Bindley U.,
Furdyna J. K.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304291
Subject(s) - ellipsometry , ternary operation , dielectric , dielectric function , semiconductor , materials science , analytical chemistry (journal) , dispersion (optics) , lattice (music) , refractive index , dispersion relation , condensed matter physics , optics , chemistry , thin film , physics , optoelectronics , nanotechnology , chromatography , computer science , acoustics , programming language
We have explored the dielectric functions of ternary Zn 1− x Mg x Te thin films using a variable angle spectroscopic ellipsometer for samples between x = 0 and x = 0.52. We obtained values for the complex dielectric function for Zn 1− x Mg x Te in both the transparent and absorption regions by incorporating a threelayer model to simulate the experimental data. To this end, we also used the previously published relations of the dispersion of the indices of refraction (in the transparent region) of Zn 1− x Mg x Te measured using a combination of prism coupler and reflectivity. We have fitted the second derivatives of both the real and the imaginary parts of the dielectric function to obtain the critical point parameters corresponding to the higher order electronic transitions in the lattice. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)