Epitaxial ZnO growth and p‐type doping with MOMBE | Zendy

Suemune Ikuo | Zendy; Ashrafi ABM. Almamun | Zendy; Ebihara Masato | Zendy; Kurimoto Makoto | Zendy; Kumano Hidekazu | Zendy; Seong TaeYeon | Zendy; Kim BongJoong | Zendy; Ok YoungWoo | Zendy

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Epitaxial ZnO growth and p‐type doping with MOMBE

Author(s) -

Suemune Ikuo,

Ashrafi ABM. Almamun,

Ebihara Masato,

Kurimoto Makoto,

Kumano Hidekazu,

Seong TaeYeon,

Kim BongJoong,

Ok YoungWoo

Publication year - 2004

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200304290

Subject(s) - doping , photoluminescence , materials science , epitaxy , superlattice , optoelectronics , luminescence , nanotechnology , layer (electronics)

Control of ZnO and CdO crystalline structures and p‐type doping in ZnO were studied. Formation of zincblende ZnO layers as well as zincblende CdO/ZnO short‐period superlattices (SPSL) are demonstrated and bright luminescence was observed even at room temperature from the CdO/ZnO SPSL. p‐Type conductivity observed in N‐doped ZnO is studied and the relation to the photoluminescence peaks is discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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