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Epitaxial ZnO growth and p‐type doping with MOMBE
Author(s) -
Suemune Ikuo,
Ashrafi ABM. Almamun,
Ebihara Masato,
Kurimoto Makoto,
Kumano Hidekazu,
Seong TaeYeon,
Kim BongJoong,
Ok YoungWoo
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304290
Subject(s) - doping , photoluminescence , materials science , epitaxy , superlattice , optoelectronics , luminescence , nanotechnology , layer (electronics)
Control of ZnO and CdO crystalline structures and p‐type doping in ZnO were studied. Formation of zincblende ZnO layers as well as zincblende CdO/ZnO short‐period superlattices (SPSL) are demonstrated and bright luminescence was observed even at room temperature from the CdO/ZnO SPSL. p‐Type conductivity observed in N‐doped ZnO is studied and the relation to the photoluminescence peaks is discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)