Premium
Formation of ohmic contacts to p ‐type ZnO
Author(s) -
Kurimoto Makoto,
Ashrafi A. B. M. Almamun,
Ebihara Masato,
Uesugi Katsuhiro,
Kumano Hidekazu,
Suemune Ikuo
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304286
Subject(s) - ohmic contact , electrical resistivity and conductivity , annealing (glass) , analytical chemistry (journal) , molecular beam epitaxy , doping , chemistry , zinc , materials science , atmospheric temperature range , oxide , diethylzinc , optoelectronics , epitaxy , metallurgy , nanotechnology , layer (electronics) , electrical engineering , biochemistry , physics , chromatography , enantioselective synthesis , meteorology , engineering , catalysis
Formation of ohmic contacts to p ‐type zinc oxide (ZnO) was studied. The p ‐type ZnO samples were grown by metalorganic molecular‐beam epitaxy with diethylzinc, deionized water vapor and monomethylhidrazine and were annealed under oxygen gas ambient at 650 °C or 700 °C for 20 min to activate doped nitrogen acceptors. Although the current‐voltage characteristics measured through gold p ‐contacts were not perfectly ohmic, they showed perfectly ohmic properties after rapid thermal annealing (RTA) in the temperature range of 300 to 520 °C for 2 min. The ohmic contact resistivity was measured with the transmission‐line measurement method and it was decreased to approximately 1/64 with increasing the RTA temperature. The minimum contact resistivity of 3.15 × 10 −3 Ω cm 2 was observed with RTA at 520 °C for 2 min. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom