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CdSe‐based nanostructures: growth, properties, lasers
Author(s) -
Ivanov S. V.,
Toropov A. A.,
Shubina T. V.,
Sorokin S. V.,
Kyutt R. N.,
Sitnikova A. A.,
Solnyshkov D. D.,
Nekrutkina O. V.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304263
Subject(s) - nucleation , quantum dot , materials science , monolayer , cadmium telluride photovoltaics , molecular beam epitaxy , nanotechnology , characterization (materials science) , nanostructure , epitaxy , optoelectronics , fabrication , chemical physics , chemistry , layer (electronics) , medicine , alternative medicine , organic chemistry , pathology
Paper presents an overview of recent results on novel CdSe quantum dot (QD) fabrication techniques with the main impact on a stressor‐controlled self‐organization process resulting in nucleation of real CdSe QDs optically active up to room temperature, with a narrower size distribution, a higher density and a high Cd content. The main idea of the stressor‐controlled epitaxy is an intentional introduction of a super‐strained fractional monolayer of the much higher lattice‐mismatch compound – stressor – to create strong local stress fields on the growth surface which govern self‐assembling of the main QD material. The studies are performed on a type‐II non‐common atom CdSe/BeTe system, where CdTe (Δ a / a ∼ +14%) and BeSe (Δ a / a ∼ −10%) interface bonds play a role of intrinsic stressors. Both experimental data (growth, structural and optical characterization) and Monte Carlo simulation of the growth process are presented. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)