CdSe‐based nanostructures: growth, properties, lasers

Paper presents an overview of recent results on novel CdSe quantum dot (QD) fabrication techniques with the main impact on a stressor‐controlled self‐organization process resulting in nucleation of real CdSe QDs optically active up to room temperature, with a narrower size distribution, a higher density and a high Cd content. The main idea of the stressor‐controlled epitaxy is an intentional introduction of a super‐strained fractional monolayer of the much higher lattice‐mismatch compound – stressor – to create strong local stress fields on the growth surface which govern self‐assembling of the main QD material. The studies are performed on a type‐II non‐common atom CdSe/BeTe system, where CdTe (Δ a / a ∼ +14%) and BeSe (Δ a / a ∼ −10%) interface bonds play a role of intrinsic stressors. Both experimental data (growth, structural and optical characterization) and Monte Carlo simulation of the growth process are presented. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)