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Magnetic resonant tunnelling diodes as voltage‐controlled spin selectors
Author(s) -
Gould C.,
Slobodskyy A.,
Slobodskyy T.,
Grabs P.,
Becker C. R.,
Schmidt G.,
Molenkamp L. W.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304252
Subject(s) - quantum tunnelling , resonant tunneling diode , diode , condensed matter physics , spin (aerodynamics) , resonance (particle physics) , magnetic field , voltage , field (mathematics) , physics , optoelectronics , quantum well , atomic physics , quantum mechanics , laser , mathematics , pure mathematics , thermodynamics
We study the transport characteristics of all II–VI semiconductor resonant tunneling diodes made from the (Zn,Mn,Be)Se material system and with a quantum well of dilute magnetic material. The current–voltage characteristics of these devices exhibit a normal resonant tunneling diode resonance at zero external magnetic field. When a field is applied, the resulting spin splitting of the levels in the quantum well splits the transmission resonance into two separate peaks that move apart with increasing field. We interpret this as evidence that the tunneling is taking place through spin polarized levels. This device could therefore be viewed as a first step towards the demonstration of a voltage controlled spin filter. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)