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Magnetic field switching of spin injection and spin coherence in magnetic quantum structures
Author(s) -
Ghali M.,
Kossut J.,
Janik E.,
Teppe F.,
Scalbert D.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304238
Subject(s) - magnetic field , condensed matter physics , spin (aerodynamics) , spins , quantum well , coherence (philosophical gambling strategy) , coherence time , quantum dot , spin polarization , spinplasmonics , chemistry , spin hall effect , materials science , physics , optoelectronics , optics , electron , quantum mechanics , thermodynamics , laser
Abstract We report on spin injection and spin dynamics of free carriers in II–VI hybrid magnetic quantum structures. As a model structure for spin injection, a MBE‐grown Cd 0.96 Mn 0.04 Te/Cd 0.98 Mg 0.02 Te/CdTe QW was studied. The Cd 0.96 Mn 0.04 Te acts as a spin aligner while a thick intermediate spacer (1000 Å) of Cd 0.98 Mg 0.02 Te can be also used to detect the carrier spins just right after their crossing the interface (in contrast to usual detection done at the QW optical transition wavelength). All‐optical CW and time‐resolved techniques were used to monitor the spin transport and spin relaxation in our structure. By tuning the spin aligner‐spacer layer band offset with an external magnetic field, we demonstrate that spin injection into the non‐magnetic CdMgTe region may be switched on and off by the field. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)