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Time resolved photoluminescence studies of Zn–Se–Te nanostructures with sub‐monolayer quantities of Te grown by molecular beam epitaxy
Author(s) -
Gu Y.,
Kuskovsky Igor L.,
van der Voort M.,
Neumark G. F.,
Zhou X.,
Muñoz M.,
Tamargo M. C.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304224
Subject(s) - photoluminescence , molecular beam epitaxy , monolayer , flux (metallurgy) , doping , materials science , epitaxy , analytical chemistry (journal) , quantum dot , quantum well , nanostructure , condensed matter physics , optoelectronics , chemistry , nanotechnology , physics , optics , layer (electronics) , metallurgy , laser , chromatography
We investigate triple‐delta‐doped ZnSe:Te samples grown with different Te/Zn flux ratios using time‐resolved photoluminescence (TRPL). We show that the properties of the TRPL of both samples are consistent with the presence of quantum islands with a type‐II band alignmrnt. Moreover, from the comparison of the PL, we show that higher Te/Zn flux ratio during the growth leads to the formation of larger quantum islands. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)