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Exciton localization in Mg x Zn y Cd 1− x − y Se alloy
Author(s) -
Maksimov O.,
Wang W. H.,
Samarth N.,
Muñoz M.,
Tamargo M. C.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304216
Subject(s) - photoluminescence , exciton , epitaxy , molecular beam epitaxy , alloy , analytical chemistry (journal) , line (geometry) , emission spectrum , activation energy , chemistry , content (measure theory) , stokes shift , materials science , crystallography , condensed matter physics , physics , spectral line , luminescence , nanotechnology , optoelectronics , metallurgy , geometry , mathematics , layer (electronics) , chromatography , astronomy , mathematical analysis
We report photoluminescence and reflectivity measurements of Mg x Zn y Cd 1− x − y Se epitaxial layers (0 < x < 0.53) grown by molecular beam epitaxy on InP (100) substrates. Significant emission line broadening, increase in activation energy and Stokes shift are monitored with increasing Mg content. For Mg x Cd y Zn 1− x − y Se samples with large Mg content ( x > 0.3), we observe an anomalous temperature dependence of both the emission energy and line broadening. This behavior is assigned to the emission from localized states. Different mechanisms of carrier localization are discussed and exciton localization on statistical CdSe clusters is proposed to be the most likely one. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)