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Extrinsic doping effect in the fabrication of CIGS and CIGSS thin film solar cells
Author(s) -
Ramanathan K.,
Pankow J.,
Asher S.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304192
Subject(s) - copper indium gallium selenide solar cells , doping , materials science , fabrication , photovoltaic system , thin film , impurity , alloy , optoelectronics , phase (matter) , window (computing) , thin film solar cell , nanotechnology , chemical engineering , chemistry , metallurgy , computer science , alternative medicine , organic chemistry , pathology , medicine , ecology , engineering , biology , operating system
This paper describes the effect of Cd and Zn impurities in the formation of photovoltaic junctions using CuInSe 2 ‐based alloy thin‐film absorbers. We compare the properties of solar cells fabricated by using CdS window layers with those obtained by Cd or Zn treatment from the liquid or vapor‐phase environments. Efficient solar cells are obtained for the latter two cases, and their properties are comparable to those with CdS window layers. The results are interpreted in terms of the ability of Cd and Zn to produce n‐type doping in the surface region of the absorbers. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)