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High‐quality ZnO epilayers grown on Zn‐polar ZnO substrates by plasma‐assisted molecular beam epitaxy
Author(s) -
Kato Hiroyuki,
Sano Michihiro,
Miyamoto Kazuhiro,
Yao Takafumi
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304189
Subject(s) - molecular beam epitaxy , sapphire , photoluminescence , metalorganic vapour phase epitaxy , materials science , flux (metallurgy) , epitaxy , stoichiometry , analytical chemistry (journal) , zinc , polar , exciton , plasma , optoelectronics , chemistry , nanotechnology , laser , optics , metallurgy , layer (electronics) , condensed matter physics , physics , chromatography , astronomy , quantum mechanics
High‐quality ZnO epilayers have been grown on Zn‐polar ZnO substrates by plasma‐assisted molecular beam epitaxy. With increasing O/Zn flux ratio from the stoichiometric to the O‐rich, the growth mode changed from three‐ to two‐dimensional growth and the line widths of (0002) and (10–10) ω‐rocking curves showed dramatic narrowing from 471 to 42 arsec and from 1635 to 46 arcsec, respectively. These values are narrower compared to those of ZnO on sapphire and also those of device‐grade MOCVD‐grown GaN. Moreover, A‐, B‐excitons (FE A , FE B ), and the n = 2 state of FE A at 3.378, 3.393, and 3.424 eV, respectively, were clearly observed in the low‐temperature (4.2 K) photoluminescence spectrum of ZnO grown under O‐rich flux conditions. Our results show that growth under high O‐rich flux conditions is required to produce high‐quality Zn‐polar ZnO films. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)