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Spin‐flip Raman scattering studies of antimony‐doped ZnSe
Author(s) -
Davies J. J.,
Wolverson D.,
Aliev G. N.,
Zeng S.,
Wang J. F.,
Isshiki M.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304172
Subject(s) - antimony , shallow donor , raman scattering , doping , valence (chemistry) , raman spectroscopy , acceptor , photoluminescence , condensed matter physics , dopant , scattering , conduction band , chemistry , materials science , inorganic chemistry , optoelectronics , optics , physics , nuclear physics , organic chemistry , electron
Spin‐flip Raman scattering and photoluminescence studies of ZnSe crystals doped with antimony have provided evidence for the presence of (i) a shallow acceptor level at about 70 meV above the valence band and (ii) a previously unreported deep donor level at about 55 meV below the conduction band, with a g ‐value of 1.81. As in ZnSe:N, it is possible that the formation of such deep‐donor states may be an inevitable consequence of high concentrations of p‐type dopants and the resulting compensation may be one of the reasons why attempts to obtain p‐type conductivity continue to be difficult. The deep donor g ‐value fits well into the sequence of previously reported g ‐values of 1.11, for shallow donor centres (at about 26 meV), of 1.38 for donors at about 45 meV and of 2.00 for deep donors at 90 meV. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)