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Characterization of ZnCdSeTe/MgZnSeTe materials for ZnTe‐based visible optical devices
Author(s) -
Nomura Ichirou,
Ochiai Yasutomo,
Toyomura Naobumi,
Manoshiro Asuka,
Kikuchi Akihiko,
Kishino Katsumi
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304159
Subject(s) - refractive index , materials science , optoelectronics , wavelength , band gap , laser , diode , characterization (materials science) , optics , waveguide , nanotechnology , physics
Bandgap energy and refractive indices of ZnTe‐based II–VI compounds such as ZnCdTe, ZnCdSeTe, and MgZnSeTe were systematically investigated. The refractive index data were approximated by the modified single effective oscillator method. Especially the approximation for MgZnSeTe made it possible to estimate the refractive index values for any Mg composition in any wavelength of the transmission region. Using the refractive index data, waveguide analysis and design of ZnCdTe/MgZnSeTe laser structures were performed to obtain confinement factors more than 4.5%. ZnCdTe/MgZnSeTe light emitting diodes were fabricated on ZnTe substrates observing yellow light emissions around 583 nm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)