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Epitaxial growth and optical properties for ultraviolet regionof BeMgZnSe on GaP(001) substrate
Author(s) -
Niiyama Yuuki,
Yokoyama Takeshi,
Watanabe Masahiro
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304158
Subject(s) - epitaxy , photoluminescence , full width at half maximum , substrate (aquarium) , molecular beam epitaxy , band gap , lattice (music) , materials science , optoelectronics , ultraviolet , buffer (optical fiber) , analytical chemistry (journal) , chemistry , crystallography , layer (electronics) , nanotechnology , physics , chromatography , oceanography , geology , acoustics , telecommunications , computer science
Epitaxial growth of high energy BeMgZnSe lattice matched to GaP(001) substrate was demonstrated using BeZnSe buffer layer with molecular beam epitaxy (MBE). BeZnSe buffer layers were introduced to suppress phase separation on GaP substrate even at high‐Mg and Be content region maintaining lattice match. Full‐width at half‐maximum (FWHM) ( ω ‐scan (004)) of Be 0.47 Mg 0.15 Zn 0.38 Se was 662.4 arcsec although we didn't observe photoluminescence. One possible explanation of this result is that the transition mechanism changes from direct to indirect for Mg content 8–15%. It was also found that the direct gap of BeMgZnSe has approximately 3.80 eV under lattice matched to GaP substrate. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)