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MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates
Author(s) -
Suzuki S.,
Kaifuchi Y.,
Kumada H.,
Ishitani Y.,
Yoshikawa A.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200304155
Subject(s) - photoluminescence , reflection high energy electron diffraction , hexagonal crystal system , materials science , quantum well , layer (electronics) , molecular beam epitaxy , crystallography , heterojunction , diffraction , reciprocal lattice , optoelectronics , chemistry , epitaxy , nanotechnology , optics , physics , laser
ZnCdMgSe epilayers and ZnCdSe/ZnCdMgSe quantum well structures were grown on GaAs(111)A and B substrates by MBE using a low‐temperature‐grown CdS buffer layer. X‐ray reciprocal space maps demonstrated that ZnCdMgSe epilayers grown on CdS buffer layers were predominantly hexagonal structures. In the quantum well structures, in‐situ RHEED pattern also demonstrated the hexagonal structure during the growth. X‐ray diffraction results showed that the crystalline quality of the ZnCdMgSe epilayers grown on GaAs(111)A surface was much better than that on the (111)B surface. Low temperature photoluminescence of ZnCdMgSe epilayers were dominated by the deep and shallow donor–acceptor pair emissions for the case of GaAs(111)A and B, respectively. The peak energy positions of the photoluminescence spectra increased with increasing the growth temperature. Although strong emissions from ZnCdMgSe barriers were observed, emissions from the ZnCdSe QW structure were very weak. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)