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Simplified bond‐hyperpolarizability model of second‐ and fourth‐harmonic generation: application to Si–SiO 2 interfaces
Author(s) -
Aspnes D. E.,
Hansen J.K.,
Peng H.J.,
Powell G. D.,
Wang J.F. T.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303825
Subject(s) - hyperpolarizability , anisotropy , second harmonic generation , fourier transform , fourier series , azimuth , dielectric , materials science , computational physics , harmonics , polarization (electrochemistry) , amplitude , representation (politics) , optics , physics , nonlinear system , chemistry , mathematics , optoelectronics , mathematical analysis , quantum mechanics , nonlinear optical , laser , voltage , politics , political science , law
Abstract We recently developed a simplified bond‐hyperpolarizability model (SBHM) to describe the variation of second‐ and fourth‐harmonic‐generation (SHG, FHG) intensities as a function of sample azimuth angle, and applied it to various Si‐dielectric interfaces. The approach provides an efficient representation of these data with fewer parameters than required by Fourier or tensorial representations. In addition, these parameters have a direct physical meaning in microscopic terms. The model is simple enough to allow analytic expressions to be obtained for SHG and FHG intensities for (001) and (111) interfaces. SHG absorption is shown to result in easily recognized features in anisotropy data. Relative amplitudes of FHG intensities of the (001)Si–SiO 2 interface among the three nonvanishing polarization combinations are shown to be consistent to a factor of about 2. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)