Premium
Magnetic ordering in doped semiconductors near the metal–insulator transition
Author(s) -
Zabrodskii A. G.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303651
Subject(s) - condensed matter physics , magnetization , magnetic semiconductor , metal–insulator transition , magnetoresistance , materials science , paramagnetism , antiferromagnetism , semiconductor , doping , magnetic moment , variable range hopping , spin glass , metal , magnetic field , physics , optoelectronics , quantum mechanics , metallurgy , thermal conduction , composite material
Experiment clearly shows a certain extent of ordering of localized magnetic moments in doped semiconductors near the metal–insulator transition. An antiferromagnetic spin glass structure is revealed in a number of n‐type materials (Ge:As, 6H‐ and 4H‐SiC:N) by Electron Spin Resonance spectroscopy as a sharp decrease in the density of paramagnetic centres, observed when approaching the transition from its insulator side. In a p‐type material (Ge:Ga), the macroscopic magnetization and residual magnetization, as well as hole coupling in pairs or clusters with uncompensated moment, follow from the recently discovered hysteresis of variable range hopping magnetoresistance, accompanied by sharp drops in resistance on reversing the magnetization of the system. The location of the magnetically ordered phases is established. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)