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Field‐compensated quaternary InAlGaN/GaN quantum wells
Author(s) -
Kalaïtzakis F.,
Androulidaki M.,
Pelekanos N. T.,
Dimakis E.,
BelletAmalric E.,
Jalabert D.,
Cengher D.,
Tsagaraki K.,
Aperathitis E.,
Konstantinidis G.,
Georgakilas A.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303536
Subject(s) - quantum well , optoelectronics , laser , materials science , field (mathematics) , layer (electronics) , optics , physics , nanotechnology , mathematics , pure mathematics
We demonstrate that it is possible to reduce significantly the internal polarisation fields in InAlGaN/GaN quantum wells (QWs), provided that the composition of the quaternary layer is appropriate. We have experimentally estimated an internal field of 2.65 mV/Å in In 0.085 Al 0.285 Ga 0.63 N/GaN QWs, which is a factor of four smaller than in “equivalent” GaN/Al 0.15 Ga 0.85 N QWs. Preliminary optical pumping experiments on laser structures using as active medium In 0.085 Al 0.285 Ga 0.63 N/GaN QWs have shown lower threshold than GaN/AlGaN laser structures at room temperature. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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