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Recombination dynamics in low‐dimensional nitride semiconductors
Author(s) -
Kawakami Y.,
Kaneta A.,
Omae K.,
Shikanai A.,
Okamoto K.,
Marutsuki G.,
Narukawa Y.,
Mukai T.,
Fujita Sg.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303427
Subject(s) - quantum confined stark effect , photoluminescence , quantum well , stark effect , exciton , semiconductor , nitride , spectroscopy , materials science , blueshift , near field scanning optical microscope , quantum dot , optoelectronics , condensed matter physics , chemistry , electric field , optics , optical microscope , nanotechnology , physics , scanning electron microscope , laser , layer (electronics) , quantum mechanics , composite material
Optical properties induced by two major effects, potential fluctuation and piezoelectric fields, have been assessed to interpret the emission mechanism in low‐dimensional nitride semiconductors because the former leads to the exciton/carrier localization, and the latter to the quantum confined Stark effect (QCSE). Degenerated white‐light pump‐and‐probe spectroscopy has been employed to assess which factor plays an important role in the series of In x Ga 1− x N multiple quantum well (MQW) structures whose well widths are 3 nm, 5 nm and 10 nm. Moreover, photoluminescence (PL) mapping with scanning near‐field optical microscopy (SNOM) has revealed the dense distribution of island‐like structures, the size of which ranges from 20 nm to 70 nm in a 3 nm‐thick In x Ga 1− x N single quantum well (SQW) structure emitting at blue spectral region. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)