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Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate
Author(s) -
Yamaguchi T.,
Saito Y.,
Morioka C.,
Yorozu K.,
Araki T.,
Suzuki A.,
Nanishi Y.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303404
Subject(s) - buffer (optical fiber) , layer (electronics) , crystallinity , materials science , substrate (aquarium) , epitaxy , amorphous solid , optoelectronics , full width at half maximum , nanotechnology , crystallography , chemistry , composite material , electrical engineering , engineering , oceanography , geology
Abstract InN films were grown on Si(111) substrates by RF‐MBE, and an AlN buffer layer was inserted between Si substrates and a low‐temperature InN buffer layer. The AlN buffer layer suppressed the formation of amorphous‐like SiN x layer on the Si substrate surface, which led to the improvement of the crystallinity of the low‐temperature InN buffer layer. High‐quality InN films could then be realized on the low‐temperature InN buffer layer with the AlN buffer layer inserted. The best value of the XRC‐FWHM was 31.3 arcmin for InN films with a thickness of 300 nm. In addition, a surface reconstruction of InN was observed for the first time. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)