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Shallow donors in GaN
Author(s) -
Freitas J. A.,
Moore W. J.,
Shanabrook B. V.,
Braga G. C. B.,
Koleske D. D.,
Lee S. K.,
Park S. S.,
Han J. Y.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303402
Subject(s) - exciton , excited state , ground state , binding energy , high resolution , shallow donor , impurity , recombination , bound state , atomic physics , spectral line , chemistry , resolution (logic) , molecular physics , physics , condensed matter physics , quantum mechanics , biochemistry , remote sensing , organic chemistry , artificial intelligence , computer science , gene , geology
High‐resolution, variable temperature PL experiments were performed in the spectral region associated with recombination processes involving the ground and excited states of the neutral donor bound excitons. High‐resolution infrared measurements in combination with high‐sensitive SIMS unambiguously identified Si and O shallow donors and yield their ground state binding energies. These binding energies are in excellent agreement with values obtained by the analysis of the two‐electron‐satellite PL spectra considering the participation of ground and excited state donor bound excitons. This work clarifies conflicting aspects existing in donor identification and the binding energies of the impurities and excitons. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)