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Carrier capture times in InGaN/GaN multiple quantum wells
Author(s) -
Fan W. H.,
Olaizola S. M.,
Wang T.,
Parbrook P. J.,
Wells J.P. R.,
Mowbray D. J.,
Skolnick M. S.,
Fox A. M.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303389
Subject(s) - charge carrier density , lasing threshold , materials science , carrier lifetime , quantum well , laser , optoelectronics , physics , optics , doping , wavelength , silicon
We have investigated the temperature and carrier density dependence of the carrier capture time of two optically pumped InGaN/GaN multiple quantum well laser structures by subpicosecond time‐resolved differential transmission spectroscopy. We find that the carrier capture time varies significantly with both the temperature and the carrier density. The carrier density dependence is consistent with screening of piezoelectric fields, in agreement with theoretical predictions. The sample with the lower threshold for stimulated emission has a faster carrier capture rate, which highlights the importance of carrier capture for the lasing process. At room temperature the capture time is less than 1.2 ps in both samples. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)