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Angular dependence of the in‐plane polarization anisotropy in the absorption coefficient of strained M ‐plane GaN films on γ‐LiAlO 2
Author(s) -
Misra Pranob,
Sun Y. J.,
Brandt O.,
Grahn H. T.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303388
Subject(s) - wurtzite crystal structure , transmittance , polarization (electrochemistry) , anisotropy , optics , materials science , molecular beam epitaxy , linear polarization , optoelectronics , condensed matter physics , chemistry , epitaxy , diffraction , physics , nanotechnology , laser , layer (electronics)
We investigate the in‐plane polarization properties of GaN films grown by plasma‐assisted molecular‐beam epitaxy on LiAlO 2 (100). Due to the crystal symmetry of LiAlO 2 (100), GaN films can be realized in a nonpolar ( M ‐plane) configuration, i.e., the c ‐axis of the wurtzite unit cell lies in the growth plane. For strained M ‐plane GaN films, the band structure of the valence band changes in such a way that the optical transmittance is completely linearly polarized for two orthogonal in‐plane directions, where one of these directions is parallel to the c ‐axis of the GaN film. The transmittance for an arbitrary in‐plane polarization angle can be described as a linear combination of the transmittance for two orthogonal polarization, one of which is parallel to the c ‐axis. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)