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Optimization of the growth of Ga 1− x Mn x N epilayers using plasma‐assisted MBE
Author(s) -
Kuroda S.,
BelletAmalric E.,
Biquard X.,
Cibert J.,
Giraud R.,
Marcet S.,
Mariette H.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303367
Subject(s) - molecular beam epitaxy , wurtzite crystal structure , materials science , ferromagnetism , crystallography , analytical chemistry (journal) , phase (matter) , diffraction , extended x ray absorption fine structure , bilayer , flux (metallurgy) , epitaxy , chemistry , absorption spectroscopy , condensed matter physics , nanotechnology , optics , metallurgy , physics , layer (electronics) , biochemistry , organic chemistry , chromatography , hexagonal crystal system , membrane
A systematic compositional and structural study of GaN : Mn epilayers grown by molecular beam epitaxy (MBE) was performed, with a special attention to the dependence on the growth conditions. The “growth diagram” related to the Ga/N flux ratio for GaN was modified by adding Mn flux. In particular, the stable Ga‐bilayer coverage on the surface for the Ga‐rich condition was reduced in the presence of Mn. The Mn incorporation in the epilayers was found to be strongly dependent on the Ga/N flux ratio. The X‐ray diffraction (XRD) and extended X‐ray absorption fine structure (EXAFS) measurements revealed a clear contrast between the precipitation of a perovskite compound GaMn 3 N at Mn compositions higher than 1.7%, and the single phase of the wurtzite Ga 1− x Mn x N at lower Mn compositions. The single‐phase epilayers ( x ≤ 1.7%) exhibited intrinsic ferromagnetic behaviors at room temperature. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)