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Long‐lived excitons up to 1 μs in GaN/AlN self‐assembled quantum dots
Author(s) -
Kako S.,
Miyamura M.,
Hoshino K.,
Arakawa Y.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303316
Subject(s) - quantum dot , exciton , oscillator strength , heterojunction , radiative transfer , materials science , electric field , condensed matter physics , photoluminescence , spontaneous emission , optoelectronics , physics , quantum mechanics , spectral line , laser
We report the observation of long‐lived excitons in GaN/AlN self‐assembled quantum dots at the temperature of 3.5 K. The PL decay time strongly increases and reaches μs order with increasing size of the QDs. This strongly suggests that the PL decay is almost free from non‐radiative processes and dominated by radiative recombination processes in the GaN QDs. The increase of the PL decay time with increasing size of the QDs originates from the reduction of the oscillator strength due to the strong built‐in electric field in the GaN/AlN heterostructures. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)