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Impact of exciton localization on the optical properties of non‐polar M ‐plane In 0.1 Ga 0.9 N/GaN multiple quantum wells
Author(s) -
Jun Sun Yue,
Brandt Oliver,
Cronenberg Sven,
Grahn Holger T.,
Ploog Klaus H.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303291
Subject(s) - exciton , quantum well , photoluminescence , polar , relaxation (psychology) , recombination , condensed matter physics , plane (geometry) , line (geometry) , quantum confined stark effect , spontaneous emission , chemistry , physics , atomic physics , molecular physics , materials science , optics , quantum mechanics , psychology , social psychology , laser , biochemistry , geometry , mathematics , gene
Localized states in M ‐plane In 0.1 Ga 0.9 N/GaN multiple quantum wells without the influence of internal electrostatic fields along the growth direction are studied. The recombination dynamics originates from simultaneous exciton relaxation towards a band of localized states and radiative recombination. The presence of localized states further manifests itself in the anomalous temperature dependence of the photoluminescence line width. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)