Impact of exciton localization on the optical properties of non‐polar  M ‐plane In 0.1 Ga 0.9 N/GaN multiple quantum wells | Zendy

Jun Sun Yue | Zendy; Brandt Oliver | Zendy; Cronenberg Sven | Zendy; Grahn Holger T. | Zendy; Ploog Klaus H. | Zendy

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Impact of exciton localization on the optical properties of non‐polar M ‐plane In 0.1 Ga 0.9 N/GaN multiple quantum wells

Author(s) -

Jun Sun Yue,

Brandt Oliver,

Cronenberg Sven,

Grahn Holger T.,

Ploog Klaus H.

Publication year - 2003

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200303291

Subject(s) - exciton , quantum well , photoluminescence , polar , relaxation (psychology) , recombination , condensed matter physics , plane (geometry) , line (geometry) , quantum confined stark effect , spontaneous emission , chemistry , physics , atomic physics , molecular physics , materials science , optics , quantum mechanics , psychology , social psychology , laser , biochemistry , geometry , mathematics , gene

Localized states in M ‐plane In 0.1 Ga 0.9 N/GaN multiple quantum wells without the influence of internal electrostatic fields along the growth direction are studied. The recombination dynamics originates from simultaneous exciton relaxation towards a band of localized states and radiative recombination. The presence of localized states further manifests itself in the anomalous temperature dependence of the photoluminescence line width. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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