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Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy
Author(s) -
Smeeton T. M.,
Kappers M. J.,
Barnard J. S.,
Vickers M. E.,
Humphreys C. J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303262
Subject(s) - high resolution transmission electron microscopy , transmission electron microscopy , indium , scattering , materials science , quantum well , diffraction , lattice constant , alloy , optics , condensed matter physics , physics , optoelectronics , nanotechnology , laser , composite material
A set of In x Ga 1− x N/GaN single quantum wells (SQWs) were analysed using X‐ray reflectivity (XRR), high resolution X‐ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). A method for determining the thickness and composition of the single quantum well layers using only X‐ray scattering measurements is described – the results agree very closely with those determined from HRTEM analysis of the same samples. HRTEM lattice fringe images obtained from InGaN subjected to minimal exposure to the electron beam were used to determine local lattice parameter maps. These show the indium to be distributed uniformly within the alloy. The electron beam very rapidly caused damage to the InGaN which could be falsely interpreted as an inhomogeneous indium distribution. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)