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Isoelectronic doping of AlGaN alloys
Author(s) -
Novikov S. V.,
Zhao L. X.,
Harrison I.,
Foxon C. T.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303257
Subject(s) - doping , molecular beam epitaxy , photoluminescence , valence band , materials science , band gap , blueshift , arsenic , band offset , analytical chemistry (journal) , epitaxy , condensed matter physics , optoelectronics , atomic physics , chemistry , nanotechnology , physics , metallurgy , layer (electronics) , chromatography
Isoelectronic doping of Al x Ga 1− x N alloys with arsenic in films grown by molecular beam epitaxy has been investigated. In photoluminescence spectra of these Al x Ga 1− x N layers, there is a gradual increase of the band gap and a smaller progressive shift of the position of blue emission band to the higher energies as the Al content increases. To explain the change in the energy of the blue band in As‐doped Al x Ga 1− x N alloys a model has been proposed, which predicts the shift in the blue band energy to be equal to the valence band offset from AlGaN to GaN. This prediction is consistent with the experimental results. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)