Premium
Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems
Author(s) -
Ramprasad R.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303239
Subject(s) - quantum tunnelling , dielectric , thermal conduction , leakage (economics) , electron , capacitor , insulator (electricity) , schottky diode , materials science , condensed matter physics , schottky effect , schottky barrier , high κ dielectric , voltage , electrical engineering , atomic physics , optoelectronics , physics , composite material , quantum mechanics , diode , economics , macroeconomics , engineering
A phenomenological model intended to provide a description of leakage behavior in metal–insulator–metal (MIM) capacitor devices is presented. The model is able to predict both transient and steady state leakage currents under constant voltage bias conditions (the J – t characteristics), as well as J – V characteristics for a given voltage sweep schedule. The electronic transport processes currently implemented in the model include trap assisted tunneling (TAT) of electrons from the electrode to defect or trap states in the dielectric, modified Poole–Frenkel (MPF) emission of part of the trapped electrons to the conduction band of the dielectric, and Schottky emission of Fermi level electrons directly from the electrode to the conduction band of the dielectric. The model is able to predict many of the observed features, including characteristic slopes in J – t and J – V plots, and dependences of the leakage current on dielectric thickness, temperature and the Schottky barrier height. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)