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Theory and simulation of dopant implantation and diffusion in SiGe
Author(s) -
Liu ChunLi,
Orlowski Marius,
Thean Aaron,
Beardmore Keith,
Barr Alex,
White Ted,
Nguyen BichYen,
Rueda Hernan,
Liu XiangYang
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303231
Subject(s) - dopant , diffusion , materials science , doping , enthalpy , dopant activation , condensed matter physics , optoelectronics , thermodynamics , physics
Strained Si‐based technology has imposed a new challenge for understanding dopant implantation and diffusion in SiGe that is often used as the buffer layer for a strained Si cap layer. In this work, we describe our latest modeling effort investigating the difference in dopant implantation and diffusion between Si and SiGe. A lattice expansion theory was developed to account for the volume change due to Ge in Si and its effect on defect formation enthalpy. The theory predicts that As diffusion in SiGe is enhanced by a factor of ∼10, P diffusion by a factor of ∼2, and B diffusion is retarded by a factor of ∼6, when compared to bulk Si. These predictions are consistent with experiment. Dopant profiles for As, P, and B were simulatedusing process simulators FLOOPS and DIOS. The simulated profiles are in good agreement with experiment. Dopant implantation was simulated using REED‐MD. The results showed a noticeable difference in peak and tail positions SiGe compared to Si. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)